absolute maximum ratings symbol parameter value units v dss drain to source voltage 30 v i d continuous drain current(@t c = 25 c) 45 a continuous drain current(@t c = 100 c) 32.3 a i dm drain current pulsed (note 1) 180 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 220 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d total power dissipation(@t c = 25 c) 75 w derating factor above 25 c 0.5 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 175 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 2.0 c/w r cs thermal resistance, case to sink - 0.5 - c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w SFP45N03L september., 2002. rev. 0. 1/7 features low r ds (on) (0.018 ? )@v gs =10v low gate charge (typical 17.5nc) low crss (typical 110pf) improved dv/dt capability 100% avalanche tested maximum junction temperature range (175c) general description this power mosfet is produc ed using semiwell?s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. this power mosfet is well suited for synchronous dc-dc converters and power management in portable and battery operated products. semiwell semiconductor copyright@semiwell semiconductor co., ltd., all rights reserved. logic n-channel mosfet to-220 1 2 3 { { { ? { { { ? symbol 2. drain 3. source 1. gate
SFP45N03L electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250ua 30 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250ua, referenced to 25 c -0.03-v/c i dss drain-source leakage current v ds = 30v, v gs = 0v --1ua v ds = 24v, t c = 150 c --10ua i gss gate-source leakage, forward v gs = 20v, v ds = 0v 100 na gate-source leakage, reverse v gs = -20v, v ds = 0v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250ua 1.0 - 3.0 v r ds(on) static drain-source on-state resis- tance v gs = 10 v, i d = 22.5a v gs = 5 v, i d = 22.5a - - 0.013 0.019 0.018 0.025 ? dynamic characteristics c iss input capacitance v gs =0 v, v ds =25v, f = 1mhz - 880 1140 pf c oss output capacitance - 370 480 c rss reverse transfer capacitance - 110 140 dynamic characteristics t d(on) turn-on delay time v dd =15v, i d =22.5a, r g =50 ? see fig. 13. (note 4, 5) -2050 ns t r rise time - 60 130 t d(off) turn-off delay time - 45 100 t f fall time - 60 130 q g total gate charge v ds =24v, v gs =5v, i d =45a see fig. 12. (note 4, 5) -17.523 nc q gs gate-source charge - 5.0 - q gd gate-drain charge(m iller charge) - 7.5 - source-drain diode ratings and characteristics symbol parameter test conditions min. typ. max. unit. i s continuous source current integral reverse p-n junction diode in the mosfet --45 a i sm pulsed source current - - 180 v sd diode forward voltage i s =45a, v gs =0v - - 1.5 v t rr reverse recovery time i s =45a,v gs =0v,di f /dt=100a/us -35-ns q rr reverse recovery charge - 30 - nc notes 1. repeativity rating : pulse width limited by junction temperature 2. l =11 0 uh, i as =45a, v dd = 15v, r g = 0 ? , starting t j = 25c 3. isd 45a, di/dt 300a/us, v dd bv dss , starting t j = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. 2/7
0 5 10 15 20 25 30 35 0 500 1000 1500 2000 2500 c rss c oss c iss notes : 1. v gs = 0v 2. f=1mhz c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current[a] v sd , source-drain voltage[v] 0 50 100 150 200 250 300 0 10 20 30 40 50 v gs = 5v v gs = 10v note : t j = 25 r ds(on) , drain-source on-resistance[m ? ] i d , drain current [a] 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 v ds = 15v v ds = 24v note : i d = 45.0 a v gs , gate-source voltage [v] q g , total gate charge [nc] 0246810 10 -1 10 0 10 1 10 2 175 o c 25 o c -55 o c notes : 1. v ds = 15v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 3/7 fig 3. on resistance variation vs. drain current and gate voltage fig 4. on state current vs. allowable case temperature fig 5. capacitance characteristics fig 6. gate charge characteristics SFP45N03L fig 1. on-state characteristics fig 2. transfer characteristics
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 2.0 /w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 175 0 10 20 30 40 50 i d' drain current [a] t c' case temperature [ o c] 10 -1 10 0 10 1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 22.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] fig 9. maximum safe operating area fig 10. maximum drain current vs. case temperature fig 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature fig 8. on-resistance variation vs. junction temperature SFP45N03L 4/7
5/7 fig 13. switching time test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms SFP45N03L fig. 12. gate charge test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss e as =l l i as 2 ---- 2 1 e as =l l i as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -- v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) 5v v ds r l dut pulse generator v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) v v ds r l dut pulse generator r g v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) 5v v ds r l dut pulse generator v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v in v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd ( 0.5 rated v ds ) v v ds r l dut pulse generator r g charge v gs 5v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs v q g q gs q gd charge v gs v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 5v q g q gs q gd charge v gs 5v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs v q g q gs q gd charge v gs v q g q gs q gd 1ma v gs dut v ds 300nf 50k 200nf 12v same type as dut
SFP45N03L dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l l i s i s fig. 15. peak diode recovery dv/dt test circuit & waveforms 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- 6/7
dim. mm inch min. typ. max. min. typ. max. a 9.7 10.1 0.382 0.398 b 6.3 6.7 0.248 0.264 c 9.0 9.47 0.354 0.373 d 12.8 13.3 0.504 0.524 e 1.2 1.4 0.047 0.055 f 1.7 0.067 g 2.5 0.098 h 3.0 3.4 0.118 0.134 i 1.25 1.4 0.049 0.055 j 2.4 2.7 0.094 0.106 k 5.0 5.15 0.197 0.203 l 2.2 2.6 0.087 0.102 m 1.25 1.55 0.049 0.061 n 0.45 0.6 0.018 0.024 o 0.6 1.0 0.024 0.039 ? 3.6 0.142 7/7 to-220 package dimension SFP45N03L 1. gate 2. drain 3. source a b c i g l 1 m e f h k n o 2 3 j d
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